CVD-grown single-crystal substrate for power electronics, RF devices, and quantum computing with industry-leading properties. Type IIa purity with 2200 W/m·K thermal conductivity and 5.5 eV bandgap energy.

Specifications

• Thermal Conductivity: 2200 W/m·K
• Bandgap Energy: 5.5 eV
• Crystal Purity: 99.99%
• Wafer Diameter: 2 inch
• Crystal Grade: Type IIa
• Growth Method: Microwave Plasma CVD
• Nitrogen Content: <5 ppb
• Surface Finish: Ra < 1 nm (optionally polished)

Applications

• Power electronics substrates
• RF & microwave devices
• Quantum computing (NV-center qubits)
• High-power laser optics
• Radiation-hard detectors