GaN-on-Diamond: The RF Power Amplifier Revolution
GaN-on-Diamond transistors achieve 3× higher power density than GaN-on-SiC. Here's the engineering behind the thermal junction that makes it possible.
Blog posts, press releases, technical videos, and industry events — everything you need to stay at the frontier of CVD diamond innovation.
Silicon dominated computing for 60 years. SiC and GaN are extending the roadmap into power electronics. But as power densities climb past 10 kW/cm² and operating temperatures approach 300°C, a harder material truth is emerging: only diamond can bridge the gap between where semiconductors are today and where AI, quantum, and electrification need them to be.
GaN-on-Diamond transistors achieve 3× higher power density than GaN-on-SiC. Here's the engineering behind the thermal junction that makes it possible.
Karia Technologies announces availability of 4-inch polycrystalline diamond wafers — the largest commercially available CVD diamond substrates at this price point.
While superconducting qubits require cooling to 10 millikelvin, diamond NV-centers operate at room temperature. This changes the commercial equation for quantum computing.
A deep look at why India-based CVD diamond production isn't just a cost play — it's a strategic shift that removes supply chain risk and geopolitical barriers for defense and quantum customers.
NVIDIA's GB200 NVL72 dissipates 120 kW per rack. Liquid cooling alone isn't enough. This is why diamond heat spreaders are becoming a standard thermal component in next-generation AI clusters.
SiC has been the power electronics substrate story of the 2020s. But at power densities above 10 kW/cm², diamond's superior thermal and breakdown properties are no longer academic — they're necessary.
From reading about diamond to holding a wafer — the gap is smaller than you think. Tell us your specs and we'll respond within 24 hours.