💎 Flagship · Type IIa

Diamond Semiconductor Substrates

Name: Diamond Semiconductor Substrates
Brand: Karia Technologies
Price: 1 USD
Availability: InStock

Single crystal (SCD) and polycrystalline (PCD) CVD diamond wafers for next-generation power electronics, GaN-on-Diamond transistors, and epitaxial growth. The only substrate with 2200 W/m·K thermal conductivity and 5.47 eV bandgap.

2200 W/m·K

SCD Conductivity

5.47 eV

Bandgap

Ra <5 nm

Surface Finish

4-inch

Max PCD Diameter

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Technical Specifications

Full datasheet.

Thermal Conductivity1,800 – 2,200 W/m·K

Bandgap5.47 eV

Carrier TypeUndoped (intrinsic), p-type (boron)

Crystal Orientation(100), (110), (111)

Maximum Plate SizeUp to 25 × 25 mm

Thickness Range0.3 – 2.0 mm

Surface Roughness (Ra)<5 nm (epi-ready polished)

Dislocation Density<10⁴ cm⁻²

Nitrogen Content<1 ppm (Type IIa)

BirefringenceLow stress — <100 nm/cm

Electrical Resistivity>10¹² Ω·cm (undoped)

Included CharacterizationRaman, FTIR, AFM, birefringence

Thermal Conductivity1,200 – 1,800 W/m·K

Available Diameters1", 2", 3", 4"

Thickness Range0.3 – 1.5 mm

Surface Roughness (Ra)<10 nm (polished face)

Grain Size (surface)1 – 50 µm depending on thickness

Bow/Warp<15 µm per 2" wafer

Fracture Toughness8 – 9 MPa·m½

sp³ Content>99.5% (Raman verified)

Crystal Purity (¹²C)Natural isotopic abundance

Surface OptionsLapped · Polished · Laser-diced

ApplicationsGaN-on-Diamond, RF spreaders, heat management

Included CharacterizationThermal map, Raman, thickness map

Use Cases

Built for extreme performance.

⚡

GaN-on-Diamond Transistors

PCD wafers as the thermal substrate for GaN epitaxy. GaN-on-Diamond achieves 3× higher power density vs GaN-on-SiC by eliminating the thermal bottleneck at the substrate interface.

🔌

Power Electronics

SCD substrates for high-voltage diamond Schottky diodes and MESFETs operating above 400°C junction temperature — beyond the reach of any WBG semiconductor.

📡

RF / Microwave Devices

Ultra-low loss tangent (tan δ <10⁻⁴) and high thermal conductivity make diamond substrates ideal for high-power mm-wave front-end modules and passive RF components.

🔬

Epitaxial Growth Platform

Epi-ready polished SCD wafers (Ra <1 nm) for homoepitaxial diamond growth and heteroepitaxial Ir/SCD stacks used in next-generation quantum processor fabrication.

Available Formats

Standard sizes & wafer formats.

All formats ship within 3 weeks. Custom sizes available with 1–2 week additional lead time.

SCD

3 × 3 mm

Prototype — in stock

SCD

5 × 5 mm

Standard — in stock

SCD · Most Popular

10 × 10 mm

Best for device fabrication

SCD

15 × 15 mm

Large plate — 2–3 wk

SCD

25 × 25 mm

Maximum SCD size

PCD · Most Popular

2" wafer

Standard PCD format

PCD

1" wafer

Entry PCD format

PCD

3" wafer

Production format

PCD

4" wafer

Largest PCD available

Every Wafer Ships With

Full characterization.
No surprises.

Diamond substrates from Karia come with the documentation your process and quality team needs — first time, every time.

✓

Certificate of Analysis with measured thermal conductivity (SCD) or thermal map (PCD)

✓

Raman spectroscopy confirming sp³ content, crystal quality, and stress map

✓

FTIR nitrogen measurement verifying Type IIa classification (SCD)

✓

AFM surface roughness report at multiple points across the polished face

✓

Thickness map with point-to-point uniformity across wafer diameter

✓

Dimensional report with bow, warp, and TTV measurement (PCD wafers)

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Ships within 3 weeks · Certificate of Analysis included · No minimum order