Chemical Vapor Deposition produces the world's purest synthetic diamond — single crystal, polycrystalline, and powder — engineered for semiconductors, quantum computing, and thermal management at 1/10th the cost of alternatives.
Chemical Vapor Deposition is the only commercially scalable method to grow diamond with consistent purity and defined geometry. A hydrocarbon gas (typically methane + hydrogen) is energized by microwave plasma at 800–1000°C, dissociating into carbon radicals that deposit epitaxially onto a seed substrate.
The result: atom-by-atom diamond growth with zero natural inclusions, tunable thickness, and crystallographic control impossible in mined diamonds.
Microwave energy ionizes a methane/hydrogen gas mixture into reactive carbon plasma at 2400–2500W power. Plasma density and gas ratio control growth rate and crystal quality.
Carbon radicals deposit onto a diamond seed in a layer-by-layer crystallographic arrangement. Growth rates of 2–20 μm/hour yield wafers from 100 μm to 3 mm thick.
Grown plates are laser-cut, lapped to target thickness (±5 μm), and polished to Ra <5 nm for device-grade surface quality. Dicing to custom shapes available.
Every wafer is characterized by Raman spectroscopy, birefringence mapping, UV-vis transmission, and thermal diffusivity measurement before shipment.
Single crystal diamond (SCD) wafers are grown as a single uninterrupted crystalline lattice — the highest-performance substrate for power electronics, quantum sensing, and optical applications. Every atom is bonded identically, eliminating grain boundaries that scatter phonons and limit conductivity.
Karia's Type IIa SCD wafers achieve the theoretical maximum thermal conductivity of diamond: up to 2200 W/m·K — six times copper, sixteen times silicon carbide.
Polycrystalline diamond (PCD) wafers are composed of millions of fused diamond microcrystals — grown simultaneously over large areas. The randomized grain structure averages out to extraordinary bulk thermal conductivity, at a fraction of SCD's cost.
Available in 1–4 inch wafer formats, PCD is the production-grade choice for heat spreaders, microwave substrates, and high-volume thermal packaging where area matters more than grain boundaries.
Precision-engineered synthetic diamond powders are produced by crushing and classifying CVD diamond and HPHT-grown crystals to precise particle size distributions. With a Mohs hardness of 10 and thermal conductivity up to 2200 W/m·K, diamond powder is the ultimate functional abrasive and thermal additive.
Karia supplies both coated (metal, polymer, or ceramic surface treatment) and uncoated powder in monocrystalline and polycrystalline grades from nano-scale through coarse abrasive.
Across every axis that matters for next-generation electronics — thermal, electrical, mechanical — CVD diamond outperforms the competition by orders of magnitude.
| Property | Diamond (CVD) ★ Best | Silicon (Si) | Silicon Carbide (SiC) | Gallium Nitride (GaN) | Copper |
|---|---|---|---|---|---|
| Thermal Conductivity (W/m·K) | 2200 | 150 | 490 | 230 | 400 |
| Bandgap (eV) | 5.47 | 1.12 | 3.26 | 3.44 | — |
| Breakdown Field (MV/cm) | 10 | 0.3 | 3.0 | 3.3 | — |
| Hardness (Mohs) | 10 | 6.5 | 9 | 8.5 | 2.5 |
| Max Operating Temp (°C) | 700+ | 150 | 400 | 300 | 300 |
| Electron Mobility (cm²/V·s) | 4500 | 1400 | 1000 | 2000 | — |
| Chemical Inertness | Exceptional | Moderate | Good | Moderate | Poor |
Common questions from engineers, procurement teams, and researchers evaluating CVD diamond for their applications.
Chemical Vapor Deposition (CVD) diamond is lab-grown using a microwave plasma reactor. Carbon from a methane/hydrogen gas mixture deposits atom-by-atom on a seed crystal at 800–1000°C. The resulting diamond is physically and chemically identical to natural diamond but with controlled purity — typically Type IIa, meaning near-zero nitrogen impurities and superior optical and thermal properties.
Single crystal diamond (SCD) grows as one continuous crystal with no grain boundaries, reaching up to 2200 W/m·K thermal conductivity. It's optimal for high-precision semiconductor and quantum applications but is limited to ~25×25 mm plates. Polycrystalline diamond (PCD) consists of many fused micro-crystals and can be grown as 1–4 inch wafers at lower cost, with 1200–1800 W/m·K conductivity — still far exceeding copper and SiC.
Single crystal plates: up to 25×25 mm, thickness from 100 µm to 3 mm. Polycrystalline wafers: 1, 2, 3, or 4 inch diameter, thickness from 200 µm to 2 mm. Custom dimensions, shapes (circular, rectangular, beveled), and polished/as-grown finishes are available. Contact our engineering team at sales@kariatech.com with your specifications.
Standard lead time is 3 weeks from order confirmation. In-stock items (common SCD plate sizes and PCD 2" wafers) can ship within 3–5 business days. Rush production is available for larger orders — please contact us to discuss your timeline.
Yes. Boron-doped CVD diamond creates a p-type semiconductor with electrical conductivity ranging from semi-insulating to metallic depending on doping level. This enables electrochemical electrode applications, power device active layers, and detector fabrication. Nitrogen-vacancy (NV) center engineering for quantum sensing applications is also available on request.
Every wafer ships with a Certificate of Analysis including: Raman spectroscopy (stress & purity verification), UV-Vis transmission spectrum, thermal diffusivity (laser flash analysis), surface roughness (Ra, profilometry), thickness uniformity map, and birefringence imaging. Custom QC protocols can be arranged for production supply agreements.
Tell us your application — wafer type, size, surface finish, quantity. We respond with pricing and technical guidance within 24 hours.